Plasma thin film deposition process

Coating processes – Measuring – testing – or indicating – Thickness or uniformity of thickness determined

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427 38, B05D 306

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048881996

ABSTRACT:
In a process of depositing a thin film onto a surface of a substrate with the use of a plasma, wherein the plasma optical emission is monitored, analyzed, and the results used to automatically control the nature of the plasma in order to control the characteristics of the deposited thin film. One aspect of the emission that is detected is the intensity of each of two emission lines of different wavelength bands from the same plasma species, the intensities being ratioed and the ratio compared to a predetermined value known to provide a resulting film with uniform and repeatable characteristics. This ratio is also related to the average electron temperature of the plasma, which can be calculated from it. Additionally, the intensity of another emission line from another of the plasma species may be measured and ratioed to one of the foregoing line intensities if additional control is desired.

REFERENCES:
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patent: 4362936 (1982-02-01), Hofmann et al.
Greene, J. Vac. Sci. Technol., 15(5), Sep./Oct. 1978, pp. 1718-1729.
Yasuda et al., Journal of Polymer Science: Chemistry Edition, vol. 16, pp. 743-759 (1978).
Inspektor et al., Plasma Chemistry and Plasma Processing, vol. 1, No. 4, 1981, pp. 377-395.
Wertheimer et al., Thin Solid Films, 115 (1984), pp. 109-124.
Suzuki et al., Japanese Journal of Applied Physics, vol. 25, No. 10, Oct. 1986, pp. 1589-1593.

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