Plasma surface treatment method for forming patterned TEOS based

Details Plasma surface treatment method for forming patterned TEOS based Plasma surface treatment method for forming patterned TEOS based

1998-03-30

2000-11-07

Bowers, Charles

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438700, 438706, 438710, 438712, 438723, H01L 2118

Patent

active

061436666

ABSTRACT:
A method for forming a via through a dielectric layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a silicon oxide dielectric layer, where the silicon oxide dielectric layer is formed through use of a plasma enhanced chemical vapor deposition (PECVD) method employing tetra-ethyl-ortho-silicate (TEOS) as a silicon source material. There is then treated the silicon oxide dielectric layer with a plasma to form a plasma treated silicon oxide dielectric layer. Finally, there is then formed upon the plasma treated silicon oxide dielectric layer a patterned photoresist layer employed in defining the location of a via to be formed through the plasma treated silicon oxide dielectric layer. Through use of the method, the patterned photoresist layer is less susceptible to delamination from the plasma treated silicon oxide dielectric layer within an isotropic etch method employed in etching the plasma treated silicon oxide dielectric layer than is an otherwise equivalent patterned photoresist layer from an otherwise equivalent silicon oxide dielectric layer absent the plasma treatment.

REFERENCES:
patent: 5180689 (1993-01-01), Liu et al.
patent: 5219791 (1993-06-01), Freiberger
patent: 5453403 (1995-09-01), Meng et al.
patent: 5552343 (1996-09-01), Hsu
patent: 5622883 (1997-04-01), Kim
patent: 5807660 (1998-09-01), Lin et al.

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