Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-01-23
1999-11-30
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
156345, 216 70, 438732, H01L 2100
Patent
active
059942363
ABSTRACT:
The present invention uses the placement of ferromagnetic cores to improve the nonuniformity of plasma processing and to increase the energy transfer efficiency of plasma sources which couple energy to a plasma through the use of radio frequency current flowing through a coil adjacent to a dielectric window. In addition, eddy current conductive elements can be used either alone or in combination with ferromagnetic cores to increase the nonuniformity adjustment range.
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patent: 5401350 (1995-03-01), Patrick et al.
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patent: 5690781 (1997-11-01), Yoshida
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