Plasma source with process nonuniformity improved using ferromag

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

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156345, 216 70, 438732, H01L 2100

Patent

active

059942363

ABSTRACT:
The present invention uses the placement of ferromagnetic cores to improve the nonuniformity of plasma processing and to increase the energy transfer efficiency of plasma sources which couple energy to a plasma through the use of radio frequency current flowing through a coil adjacent to a dielectric window. In addition, eddy current conductive elements can be used either alone or in combination with ferromagnetic cores to increase the nonuniformity adjustment range.

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patent: 5346578 (1994-09-01), Benzing
patent: 5368710 (1994-11-01), Chen
patent: 5401350 (1995-03-01), Patrick et al.
patent: 5622635 (1997-04-01), Cuomo et al.
patent: 5690781 (1997-11-01), Yoshida

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