Plasma source for etching

Details Plasma source for etching Plasma source for etching

1991-12-10

1994-07-19

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 20429806, 20429834, H01L 2100

Patent

active

053306066

ABSTRACT:
An apparatus for generating plasma is disclosed. The apparatus comprises: a plasma chamber; pairs of parallel plate electrodes; and a power supply for applying high-frequency powers on the pairs of electrodes. The frequencies of the high-frequency powers and the phase difference between the high-frequency powers are adjusted so as to cause each of electrons in the plasma to move in a circular path. A dense and highly uniform plasma is generated at a low pressure level, by utilizing the phenomenon of the oscillation, revolution or cycloidal motion of electrons in a high-frequency electric field formed between the parallel plate electrodes. This plasma is suitable for etching in the LSI fabrication process.

REFERENCES:
patent: 4668338 (1987-05-01), Maydan et al.
patent: 4954201 (1990-09-01), Latz et al.
patent: 4975144 (1990-12-01), Yamazaki et al.
patent: 5078851 (1992-01-01), Nishihata et al.

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