Plasma source

Details Plasma source Plasma source

1997-04-17

2000-07-04

Dang, Thi

Coating apparatus

Gas or vapor deposition

With treating means

156345, 118723MW, C23C 1600, C23F 102

Patent

active

060822937

ABSTRACT:
According to the present invention, when power is supplied from a high frequency power supply to an antenna 14, a quasi-electrostatic induced electric field E.sub.PS is generated in a chamber 11, and plasma P of high density is generated over a broad area. Further, an alternating current (frequency: several tens Hz to several tens KHz) flows in polyphase AC magnets 17 by a polyphase AC inverter power supply, whereby a horizontal magnetic field (magnetic flux density B) is generated on a semiconductor wafer 13. The magnetic field thus generated rotates at the rotational number corresponding to the frequency which is set in the polyphase AC inverter power supply, and the rotation of the magnetic field causes a rotating electric field E to occur on the surface of the semiconductor wafer 13. In a surface area of the semiconductor wafer 13, an electric field E.sub.V (plasma sheath electric field E.sub.sheath) is generated in the vertical direction while an electric field E.sub.H obtained by adding the rotating electric field E.sub.MAG to the induced electric field E.sub.PS generated by the antenna 14 is generated in the horizontal direction, so that the composite electric field E.sub.C of the electric field E.sub.H and the electric field E.sub.V is generated at a desired angle to the surface of the semiconductor wafer 13.

REFERENCES:
patent: 4740268 (1988-04-01), Bukhman
patent: 4947085 (1990-08-01), Nakanishi et al.
patent: 5431769 (1995-07-01), Kisakibaru et al.
patent: 5527394 (1996-06-01), Heinrich et al.

Affiliated with

Also associated with

Rating

Plasma source does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma source, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma source will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1476461