Plasma reactor with magnet for protecting an electrostatic chuck

Coating apparatus – Gas or vapor deposition – With treating means

Patent

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Details

118723E, 156345, 20429815, C23C 1600

Patent

active

054844851

ABSTRACT:
The present invention ameliorates the problem in a plasma reactor of plasma attacking an electrostatic chuck and the wafer periphery backside by placing a magnet in the quartz wall adjacent the wafer peripheral edge.

REFERENCES:
patent: 4140943 (1979-02-01), Ehlers
patent: 5178739 (1993-01-01), Barnes et al.
patent: 5306985 (1994-04-01), Berry

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