Plasma reactor having segmented electrodes

Details Plasma reactor having segmented electrodes Plasma reactor having segmented electrodes

1989-04-26

1989-12-05

Niebling, John F.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C23C 1400

Patent

active

048850748

ABSTRACT:
A reactor for generating a uniform field of energized gas for plasma processing. The reactor chamber is capable of sustaining a vacuum. A mechanism for mounting a workpiece is disposed within the reactor chamber so that a workpiece can be exposed to energized gas. A first electrode in the chamber is positioned in operative relationship to the workpiece mounting mechanism and a second electrode within the reactor is positioned to at least partially surround the first electrode.

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Thin Film Technology by Robert W. Perry, Peter M. Hall & Murray T. Harris, Van Nostrand Reinhold Company, Copyright 1968.

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