Plasma reactor for processing substrates comprising means for in

Details Plasma reactor for processing substrates comprising means for in Plasma reactor for processing substrates comprising means for in

1991-12-13

1994-01-18

Hearn, Brian E.

Coating apparatus

Gas or vapor deposition

With treating means

156345, 31511141, 20429816, 20429837, 20429838, 118723I, C23C 1600, H01L 2100

Patent

active

052796698

ABSTRACT:
A plasma reactor for forming a dense plasma from a gas is described incorporating a housing, a gas inlet to the housing, a pump for evacuating the housing, a magnetic coil to generate a magnetic field in the housing, a radio frequency power supply, an electrode or induction coil in the housing, a microwave power supply. The invention overcomes the problem of an upper plasma density limit independent of increases in microwave power by inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions.

REFERENCES:
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patent: 4492620 (1985-01-01), Matsuo et al.
patent: 4505949 (1985-03-01), Jelks
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patent: 4559100 (1985-12-01), Ninomiya et al.
patent: 4609428 (1986-09-01), Fujimura
patent: 4624214 (1986-11-01), Suzuki et al.
patent: 4683838 (1987-08-01), Kimura et al.
patent: 4691662 (1987-09-01), Roppel et al.
patent: 5032202 (1991-07-01), Tsai et al.
K. Suzuki et al., "Radio-Frequency Biased Microwave Plasma Etching Technique . . . ", J. Vac. Sci., Technol. B3, 1025 (1985).
R. W. Boswell et al., "Pulsed High Rate Plasma Etching with Variable Si/SiO.sub.2 Selectivity and Variable Si Etch Profiles", Appl. Phys. Lett. 47, 1095 (1985).

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