Plasma reactor for processing substrates

Details Plasma reactor for processing substrates Plasma reactor for processing substrates

1993-09-02

1995-09-26

Beck, Shrive

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of coating supply or source outside of primary...

427563, 427564, 427570, 427571, 427575, 427585, 21912141, 21912144, 21912156, 21912159, 118723MR, 118723MA, 31511141, 31511191, 216 70, C23C 1600

Patent

active

054533058

ABSTRACT:
A plasma reactor and method for forming a dense plasma from a gas is described incorporating a housing, a gas inlet to the housing, a pump for evacuating the housing, a magnetic coil to generate a magnetic field in the housing, a radio frequency power supply, an electrode or induction coil in the housing, a microwave power supply. The invention overcomes the problem of an upper plasma density limit independent of increases in microwave power.

REFERENCES:
patent: 4401054 (1983-08-01), Matsuo et al.
patent: 4438368 (1984-03-01), Abe et al.
patent: 4505949 (1985-03-01), Jelks
patent: 4609428 (1986-09-01), Fujimura
patent: 4624214 (1986-11-01), Suzuki et al.
patent: 4691662 (1987-09-01), Roppel et al.
patent: 5279669 (1994-01-01), Lee
patent: 5324553 (1994-06-01), Ovshinsky et al.
Electron Cyclotron Resonance Plasma Deposition Technique Using Raw Material Supply by Sputtering, by Ono et al., Japanese Journal of Applied Physics, vol. 23, No. 8, Aug. 1984, pp. L534-L536.

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