Plasma reactor for performing an etching or deposition method

Details Plasma reactor for performing an etching or deposition method Plasma reactor for performing an etching or deposition method

1994-08-16

1995-03-28

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

156345, C23C 1600

Patent

active

054013186

ABSTRACT:
A plasma reactor for performing an etching or deposition method, said reactor including a vacuum enclosure designed to receive a substrate to be treated, and including means for inserting a gas to be ionized, the plasma, which is produced in a container, being excited by an antenna fed by a radio-frequency power generator, wherein said antenna is composed of an electrical conductor that constitutes a single circular loop having two diametrically-opposite points connected to feed conductors.

REFERENCES:
patent: 4810935 (1989-03-01), Boswell
patent: 4990229 (1991-02-01), Campbell
patent: 5091049 (1992-02-01), Campbell
patent: 5122251 (1992-06-01), Campbell
patent: 5280154 (1994-01-01), Cuomo
French Search Report FR 9310301.

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