Plasma reactor apparatus

Details Plasma reactor apparatus Plasma reactor apparatus

1984-10-29

1986-04-01

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 156646, 204298, 204192E, B44C 122, C03C 1500, C03C 2506, C23F 102

Patent

active

045796181

ABSTRACT:
Plasma processing is accomplished with an improved single electrode reactor apparatus. High and low frequency power supplies are coupled to the single electrode to provide increased process flexibility, control and residue removal. A multi-stage passive filter network is disclosed which performs the functions of coupling both power supplies to the electrode, isolating the low frequency power supply from the high frequency power supply and attenuating the undesired frequencies produced by mixing of the two frequencies in the non-linear load represented by the reactor.

REFERENCES:
patent: 4298419 (1981-11-01), Suzuki et al.
patent: 4316791 (1982-02-01), Taillet
patent: 4352725 (1982-10-01), Tsukada
patent: 4411733 (1983-10-01), Macklin et al.
patent: 4464223 (1984-08-01), Gorin

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