Plasma reaction apparatus

Details Plasma reaction apparatus Plasma reaction apparatus

1995-08-17

1997-12-09

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723E, H05H 1100

Patent

active

056955979

ABSTRACT:
Electric field E is generated radially between reaction container and bar-shaped electrode, magnetic field B is formed perpendicular to the electric field, and wafer is disposed perpendicular to magnetic field B. Therefore, the E.times.B drift of plasma generated by magnetron discharge is in the tangential direction of a circle centered at bar-shaped electrode and is parallel to the surface of wafer, whereby maldistribution of plasma in the radial direction is restricted and plasma is distributed uniformly above the main surface of the wafer.

REFERENCES:
patent: 4438368 (1984-03-01), Abe et al.
patent: 4891095 (1990-01-01), Ishida et al.
patent: 5091049 (1992-02-01), Campbell et al.
patent: 5221427 (1993-06-01), Koinuma et al.
Kostadinov et al., "A low working pressure magnetron sputtering source", Vacuum, vol. 42, 1991, pp. 35-35.
"Improved Sputter Deposition With Cylindrical Magnetrons", IBM Technical Disclosure Bulletin, vol. 27, No. 11, Apr. 1985, pp. 6796-6797.
Thornton et al., "Cylindrical Magnetron Sputtering", Thin Film Processes, Academic Press, RCA Laboratories, 1978, pp. 75-99.

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