Plasma production of trichorosilane, SiHCl.sub.3

Details Plasma production of trichorosilane, SiHCl.sub.3 Plasma production of trichorosilane, SiHCl.sub.3

1983-07-25

1989-06-06

Dixon, Jr., William R.

Chemistry of inorganic compounds

Silicon or compound thereof

Halogen containing

423341, 423347, 423DIG10, 204164, C01B 1700

Patent

active

048369977

ABSTRACT:
Trichlorosilane, SiHCl.sub.3, is facilely prepared by (i) thermally reducing silicon tetrachloride, SiCl.sub.4, with hydrogen to produce reaction admixture comprising SiHCl.sub.3 and hydrochloric acid, said thermal reduction being carried out in a thermal plasma while tempering the reaction medium with a cooling gas, (ii) reacting said step (i) reaction admixture with elemental silicon at a temperature of from about 250.degree. to 350.degree. C. to produce SiHCl.sub.3 and hydrogen therefrom, and thence (iii) separating (iiia) the plasma-creating, hydrogen and cooling gases, and (iiib) product silicon chlorides therefrom.

REFERENCES:
patent: 3069239 (1962-12-01), Winter et al.
patent: 3899573 (1975-08-01), Shaw et al.
patent: 4309259 (1982-01-01), Sarma et al.
patent: 4321246 (1982-03-01), Sarma et al.
patent: 4451436 (1984-05-01), O'Hare

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