Plasma production of polycrystalline silicon

Details Plasma production of polycrystalline silicon Plasma production of polycrystalline silicon

2005-08-09

2005-08-09

Nguyen, Ngoc-Yen (Department: 1754)

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

C433S149000, C433S149000

Reexamination Certificate

active

06926876

ABSTRACT:
The invention is directed to a method of producing polycrystaline silicon metal from a silicon halide plasma source. The silicon halide is split into silicon and halide ions in an inductively coupled plasma and silicon ions are then condensed to form molten silicon metal that can be vacuum cast into polysilicon ingots. The halide ions are separated and recycled into silicon halide gas over a silicon dioxide bed. In this way, high grade polysilicon is produced without a metallurgical grade silicon precursor and the process these processes consumes the byproducts in a continuous manner madding it less expensive than traditional methods of producing polysilicon and more environmentally friendly.

REFERENCES:
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patent: 4321246 (1982-03-01), Sarma et al.
patent: 4377564 (1983-03-01), Dahlberg
patent: 4668331 (1987-05-01), Ostriker
patent: 5221643 (1993-06-01), Griep

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