Plasma production device and method and RF driver circuit

Details Plasma production device and method and RF driver circuit Plasma production device and method and RF driver circuit

2006-11-07

2006-11-07

Le, Hoanganh (Department: 2821)

Communications: radio wave antennas

Antennas

Loop type

C343S742000, C343S867000, C204S164000

Reexamination Certificate

active

07132996

ABSTRACT:
An RF driver circuit and an orthogonal antenna assembly/configuration, are disclosed as part of a method and system for generating high density plasma. The antenna assembly is an orthogonal antenna system that may be driven by any RF generator/circuitry with suitable impedance matching to present a low impedance. The disclosed RF driver circuit uses switching type amplifier elements and presents a low output impedance. The disclosed low-output impedance RF driver circuits eliminate the need for a matching circuit for interfacing with the inherent impedance variations associated with plasma. Also disclosed is the choice for capacitance or an inductance value to provide tuning for the RF plasma source.

REFERENCES:
patent: 3860507 (1975-01-01), Vossen, Jr.
patent: 4557819 (1985-12-01), Meacham et al.
patent: 4629887 (1986-12-01), Bernier
patent: 4792732 (1988-12-01), O'Loughlin
patent: 4824546 (1989-04-01), Ohmi
patent: 5108569 (1992-04-01), Giboa et al.
patent: 5140223 (1992-08-01), Gesche et al.
patent: 5147493 (1992-09-01), Nishimura et al.
patent: 5273610 (1993-12-01), Thomas, III et al.
patent: 5288971 (1994-02-01), Knipp
patent: 5429070 (1995-07-01), Campbell et al.
patent: 5473291 (1995-12-01), Brounley
patent: 5478429 (1995-12-01), Komino et al.
patent: 5541482 (1996-07-01), Siao
patent: 5558718 (1996-09-01), Leung
patent: 5580385 (1996-12-01), Paranjpe et al.
patent: 5602865 (1997-02-01), Laakmann
patent: 5609690 (1997-03-01), Watanabe et al.
patent: 5643364 (1997-07-01), Zhao et al.
patent: 5654679 (1997-08-01), Mavretic et al.
patent: 5688357 (1997-11-01), Hanawa
patent: 5689949 (1997-11-01), DeFreitas et al.
patent: 5712592 (1998-01-01), Stimson et al.
patent: 5734353 (1998-03-01), Van Voorhies
patent: 5747935 (1998-05-01), Porter et al.
patent: 5815047 (1998-09-01), Sorensen et al.
patent: 5892198 (1999-04-01), Barnes et al.
patent: 6007879 (1999-12-01), Scholl
patent: 6150628 (2000-11-01), Smith et al.
patent: 6165311 (2000-12-01), Collins et al.
patent: 6252354 (2001-06-01), Collins et al.
patent: 6264812 (2001-07-01), Raaijmakers et al.
patent: 6304036 (2001-10-01), Freeman et al.
patent: 6305316 (2001-10-01), DiVergilio et al.
patent: 6326584 (2001-12-01), Jewett et al.
patent: 6388226 (2002-05-01), Smith et al.
patent: 6392210 (2002-05-01), Jewett et al.
patent: 6432260 (2002-08-01), Mahoney et al.
patent: 6486431 (2002-11-01), Ogure
patent: 6552296 (2003-04-01), Smith et al.
patent: WO 01/93315 (2001-12-01), None
patent: WO 02/082561 (2002-10-01), None
patent: PCT/US04/12277 (2005-02-01), None
Batchelor, D.B.,Overview of ORNL RF Theory, May 9, 2000,presented inornl dbb Jun. 19, 2001.
Hayden et al.,The Application of Helicon Antennas as a Secondary Plasma Source for Ionized PVD, University of Illinois at Urbana-Champaign.
http://www.abatementsystems.com, website of LITMAS High Density Plasma Tools (printed May 12, 2002).
International Search Report of International Application No. PCT/US02/32334, mailed Feb. 26, 2003.
Long-Term Evaluation of the Litmas “Blue” Plasma Device for Point-of-Use(POU)Perfluorocompound and Hydrofluorocarbon Abatement, by International SEMATECH.
Mode Conversion Experiment in CAT,available athttp://www.physics.auburn.edu/˜plasma/fusion/fusion lab/cat/icrf/construction.html (printed Apr. 19, 2002).
Patil et al.,Microwave plasma deposition of diamond like carbon coatings, PRAMANA J. Physics, vol. 55, nos. 5 & 6, Nov. & Dec. 2000, pp. 933-939.
Ritchey,Tuner Topics, by Advanced Energy.
Heckman et al.,The Evolution of RF Power Delivery in Plasma Processing, Advanced Energy, pp. 1-8.
Article entitled “A 2-MHz 6-k VA Voltage-Source Inverter Using Low-Profile Mosfet Modules for Low-Temperature Plasma Generators,” published in IEEE Transations on Power Electronics, vol. 14, No. 6 (Nov. 1999).
Article entitled “A 2-MHz, 6-k VA Voltage-Source Inverter Using Low-Profile Mosfet Modules for Low-Temperature Plasma Generators,” by Hideaki Fujita, Hirofumi Akagi (Dept. of Electrical Engineering) and Shinichi Shinohara (Orgin Electric Co., Ltd.), copyright 1998 IEEE.
Article entitled “A 2-MHz 2-kW Voltage-Source Inverter for Low-Temperature Plasma Generators: Implemenation of Fast Switching with a Third-Order Resonant Circuit,” published in IEEE Transactions on Industry Applications, vol. 35, No. 1 (Jan./Feb. 1999) by Hideaki Fujita and Hirofumi Akagi.
Article entitled “Improving Processes Through RF Power Control”, published in Semiconductor Fabtech -11thEdition (Feb. 2000).
3kW and 5kW Half-Bridge Class-D RF Generators at 13.56MHz 89% Efficiency and Limited Frequency Agility, Direct Energy, Inc., 2002.

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