Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2006-09-05
2006-09-05
Vo, Tuyet Thi (Department: 2821)
Coating apparatus
Gas or vapor deposition
With treating means
C118S7230AN, C118S7230AN, C156S345480, C156S345390, C343S866000, C343S742000, C343S867000, C315S111510
Reexamination Certificate
active
07100532
ABSTRACT:
A reactive circuit is disclosed as part of a method and system for generating high density plasma that does not require the use of a dynamic matching network for directly driving a plasma exhibiting a dynamic impedance. The reactive network is designed to provide a small total reactance when the plasma reactance is at a first plasma reactance and presents a reactance that does not exceed a specified limit at a second plasma reactance. The first and second plasma reactance span a substantially fraction of an expected dynamic plasma reactance range. The first and second plasma reactance values may, for example, correspond to a high expected plasma reactance limit and a low expected plasma reactance limit respectively or the first plasma reactance may correspond to an average expected plasma reactance.
REFERENCES:
patent: 3860507 (1975-01-01), Vossen, Jr.
patent: 4557819 (1985-12-01), Meacham et al.
patent: 4629887 (1986-12-01), Bernier
patent: 4792732 (1988-12-01), O'Loughlin
patent: 4824546 (1989-04-01), Ohmi
patent: 5108569 (1992-04-01), Gilboa et al.
patent: 5140223 (1992-08-01), Gesche et al.
patent: 5147493 (1992-09-01), Nichimura et al.
patent: 5273610 (1993-12-01), Thomas, III et al.
patent: 5288971 (1994-02-01), Knipp
patent: 5429070 (1995-07-01), Campbell et al.
patent: 5473291 (1995-12-01), Brounley
patent: 5478429 (1995-12-01), Komino et al.
patent: 5541482 (1996-07-01), Siao
patent: 5558718 (1996-09-01), Leung
patent: 5580385 (1996-12-01), Paranjpe et al.
patent: 5602865 (1997-02-01), Laakmann
patent: 5609690 (1997-03-01), Watanabe et al.
patent: 5643364 (1997-07-01), Zhao et al.
patent: 5654679 (1997-08-01), Mavretic et al.
patent: 5688357 (1997-11-01), Hanawa
patent: 5689949 (1997-11-01), DeFreitas et al.
patent: 5712592 (1998-01-01), Stimson et al.
patent: 5734353 (1998-03-01), Van Voorhies
patent: 5747935 (1998-05-01), Porter et al.
patent: 5815047 (1998-09-01), Sorensen et al.
patent: 5892198 (1999-04-01), Barnes et al.
patent: 6007879 (1999-12-01), Scholl
patent: 6150628 (2000-11-01), Smith et al.
patent: 6165311 (2000-12-01), Collins et al.
patent: 6252354 (2001-06-01), Collins et al.
patent: 6264812 (2001-07-01), Raaijmakers et al.
patent: 6304036 (2001-10-01), Freeman et al.
patent: 6305316 (2001-10-01), DiVergilio et al.
patent: 6326584 (2001-12-01), Jewett et al.
patent: 6388226 (2002-05-01), Smith et al.
patent: 6392210 (2002-05-01), Jewett et al.
patent: 6432260 (2002-08-01), Mahoney et al.
patent: 6486431 (2002-11-01), Smith et al.
patent: 6552296 (2003-04-01), Smith et al.
patent: WO 01/93315 (2001-12-01), None
patent: WO 02/082861 (2002-10-01), None
patent: PCT/US04/12277 (2005-02-01), None
Batchelor, D.B.,Overview of ORNL RF Theory, May 9, 2000, presented in ornl dbb Jun. 19, 2001.
Hayden et al.,The Application of Helicon Antennas as a Secondary Plasma Source for Ionized PVD, University of Illinois at Urbana-Champaign.
International Search Report of International Application No. PCT/US02/32334, mailed Feb. 26, 2003.
Long-Term Evaluation of the Litmas “Blue” Plasma Device for Point-of-Use(POU)Perfluorocompound and Hydrofluorocarbon Abatement, by International SEMATECH.
Mode Conversion Experiment in CAT,available athttp://www.physics.auburn.edu/˜plasma/fusion/fusion—lab/cat/icrf/construction.html (printed Apr. 19, 2002).
Patil et al.,Microwave plasma deposition of diamond like carbon coatings, PRAMANA J. Physics, vol. 55, Nos. 5 & 6, Nov. & Dec. 2000, pp. 933-939.
Ritchey,Tuner Topics, by Advanced Energy.
3kW and 5kW Half-Bridge Class-D RF Generators at 13.56MHz 89% Efficency and Limited Frequency Agility, Direct Energy, Inc., 2002.
Litmas RPS 1501, copyright notice dated 2004.
Article entitled “Improving Processes Through RF Power Control”, published in Semiconductor Fabtech—11thEdition (Feb. 2000).
Article entitled “A 2-MHz 6-k VA Voltage-Source Inverter Using Low-Profile Mosfet Modules for Low-Temperature Plasma Generators,” published in IEEE Transactions on Power Electronics, vol. 14, No. 6 (Nov. 1999).
Article entitled “A 2-MHz, 6-k VA Voltage-Source Inverter Using Low-Profile Mosfet Modules for Low-Temperature Plasma Generators,” by Hideaki Fujita, Hirofumi Akagi (Dept. of Electrical Engineering) and Shinichi Shinohara (Orgin Electric Co., Ltd.), copyright 1998 IEEE.
Article entitled “A 2-MHz 2-kW Voltage-Source for Low-Temperature Plasma Generators: Implemention of Fast Switching with a Third-Order Resonant Circuit,” published in IEEE Transactions on Industry Applications, vol. 35, No. 1 (Jan./Feb. 1999) by Hideaki Fujita and Hirofumi Akagi.
Jones Day
Plasma Control Systems LLC
Vo Tuyet Thi
LandOfFree
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