Plasma processing with inductive coupling

Details Plasma processing with inductive coupling Plasma processing with inductive coupling

1995-08-30

1997-10-28

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723IR, 31511151, C23C 1500

Patent

active

056814186

ABSTRACT:
A plasma processing apparatus includes: a process chamber with a side wall capable of being evacuated; magnetic field generating means disposed externally of the side wall of the process chamber, for generating a radio frequency magnetic field in the process chamber and generating plasma through inductive coupling; a base disposed in the process chamber for placing thereon a substrate to be processed; and a cooling unit for cooling the side wall of the process chamber near at a space where the plasma is generated. It is possible to generate high density plasma under a low pressure and to prevent the inner surface of a vacuum belljar from being etched by plasma.

REFERENCES:
patent: 4795879 (1989-01-01), Hull et al.
patent: 4844775 (1989-07-01), Keeble
patent: 5087434 (1992-02-01), Frenklach et al.
patent: 5234529 (1993-08-01), Johnson
patent: 5241245 (1993-08-01), Barnes et al.
patent: 5304282 (1994-04-01), Flamm
patent: 5346578 (1994-09-01), Benzing et al.
patent: 5514246 (1996-05-01), Blalock

Affiliated with

Also associated with

Rating

Plasma processing with inductive coupling does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing with inductive coupling, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing with inductive coupling will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1023353