Plasma processing system in which wafer is retained by...

Details Plasma processing system in which wafer is retained by... Plasma processing system in which wafer is retained by...

2006-11-21

2006-11-21

Hassanzadeh, Parviz (Department: 1763)

Coating apparatus

Gas or vapor deposition

With treating means

C118S728000, C361S234000, C156S345470

Reexamination Certificate

active

07137352

ABSTRACT:
A plasma processing system comprises a processing chamber into and from which processing gas is inlet and outlet; a pair of electrodes disposed so as to mutually oppose within the processing chamber; a RF feeding apparatus for generating plasma between the pair of electrodes; a retaining/removal apparatus for retaining a substrate to be processed on and removal from a sample table while one of the pair of electrodes is taken as the sample table; and a detection apparatus for detecting the electrostatic-chucking state of the substrate and for detecting removal state of electrical charges from the substrate, on the basis of variations in impedance arising between the sample table and the substrate.

REFERENCES:
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patent: 62054637 (1987-03-01), None
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Burns and Roberts, An Introduction to Mixed-Signal Test, Feb. 8, 2001, Oxford University Press, Texas Instruments, p. 1.

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