Plasma processing system and method

Details Plasma processing system and method Plasma processing system and method

1995-05-18

1996-05-21

Nguyen, Nam

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723MP, 118723E, 118723ER, C23C 1650, H01L 2100

Patent

active

055185720

ABSTRACT:
An etching system contains a plasma chamber, a charge exchange chamber and a processing chamber. The charge exchange chamber and the processing chamber are partitioned with a porous plate provided with a number of fine linear microchannel holes. Positive ions generated by the plasma chamber are accelerated by an accelerating electrode in the charge exchange chamber, charge-exchanged and introduced as neutral particles through the microchannel holes into the processing chamber. Neutral particles are vertically entered into an object to be processed as neutral particle beams that are completely aligned by the microchannel holes. An object with a large surface area can be etched with high accuracy by making the porous plate a size which corresponds to the object. Thus, plasma processing with only neutral particles is carried out with high accuracy even when the surface area of the object is large.

REFERENCES:
patent: 4123663 (1978-10-01), Horiike
patent: 4595484 (1986-06-01), Giammarco et al.
patent: 4859303 (1989-08-01), Kalmitsky et al.
patent: 5006220 (1991-04-01), Hijikata et al.
patent: 5082685 (1992-01-01), Morooka
Tatsumi Mizutani et al., Neutral-Beam-Assisted Etching of SiO.sub.2 --A Charge-Free Etching Process--, Jap. Journ. of Applied Physics, Oct. 1990, vol. 29, No. 10, pp. 2220-2222.
S. O. Saied et al., The Development and Use of a Time-of-Flight System to Analyse Energy Spectra Produced by a Fast Atom Beam Source, Vacuum, vol. 38, No. 6, pp. 469 to 473, 1988.

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