Plasma processing system

Details Plasma processing system Plasma processing system

1997-12-02

2000-06-06

Walberg, Teresa

Electric heating

Metal heating

By arc

216 68, B23H 100

Patent

active

060721472

ABSTRACT:
A plasma processing system capable of carrying out a uniform processing is provided.
According to the present invention, a substantially annular high-frequency antenna 156 of a predetermined number of turns, e.g., 1 turn, is provided in an opening 102b via a first shielding member 160 and a dielectric member 158. The capacitance of a variable capacitor 172 connected to ground is adjusted so that series resonance occurs at the mid point of the high-frequency antenna 156. With this construction, it is possible to form a desired electric field in a plasma producing space to produce a high-density plasma. In addition, a feeding member 126 is formed so that the substantially vertical cross-section thereof has a profile expressed by an exponential function r=f(L). Therefore, it is possible to supply a high-frequency power to an upper electrode without causing the electric breakdown and the damping of the high-frequency power.

REFERENCES:
patent: 4233109 (1980-11-01), Nishizawa
patent: 4844775 (1989-07-01), Keeble
patent: 5565114 (1996-10-01), Saito et al.
patent: 5763851 (1998-06-01), Forster et al.
patent: 5772833 (1998-06-01), Inazawa et al.
patent: 5824158 (1998-10-01), Takeuchi et al.

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