Plasma processing system

Details Plasma processing system Plasma processing system

1996-05-21

1999-04-27

Ford, John M.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

1341041, 118723R, H01L 21302, B44C 122, C03C 1500

Patent

active

058977406

ABSTRACT:
A system for processing a substrate with plasma. In the system, a substrate holder includes an energy application member for energizing an exposure face other than a substrate placement portion. The energy application member energizes the exposure face by an induced current when high-frequency electromagnetic wave power is applied, by heat generated upon energization, or by ion bombardment when a high-frequency electric field is applied. Perfluorocarbon 14 gas and oxygen gas introduced by a gas introduction mechanism form plasma by a power supply mechanism for etching and removing a thin film deposited on the exposure face. At this time, the etching is accelerated by energy given by the energy application member.

REFERENCES:
patent: 5662770 (1997-09-01), Donohoe
patent: 5662819 (1997-09-01), Kadomura
patent: 5667701 (1997-09-01), Sato et al.
patent: 5683539 (1997-11-01), Quian et al.

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