Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1995-02-03
1997-09-02
Caldarola, Glenn A.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
216 70, 216 79, 216 68, 134 11, 438732, B44C 122, C03C 1500, C03C 2506, C23F 100
Patent
active
056628196
ABSTRACT:
Controlling ion/radical ratio and monoatomic/polyatomic radical ratio in a process plasma provides improved processing performance during inductively-coupled plasma and/or helicon wave plasma processing of substrate materials. In a plasma processing method employing inductively coupled plasma, high frequency current to a high frequency antenna is intermittently supplied in a controlled manner to control the state of gas dissociation to promote formation of polyatomic radicals. In a plasma processing method employing helicon wave plasma, current supplied to a magnetic field generator is intermittently supplied in a controlled manner to promote formation of ions. In a preferred method both the high frequency current and magnetic field generating current are varied in a controlled manner to provide a variable plasma composition, i.e., radical rich plasma or ion-rich plasma, as desired, for improved plasma processing especially improved selective anisotropic dry etching at high etch rate.
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Extended Abstract to the 40th Lecture Meeting of the Society of Applied Physics, Spring Meeting of 1993, p. 529, Lecture No. 29p-ZE-6-8.
Caldarola Glenn A.
Pasterczyk J.
Sony Corporation
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