Plasma processing method, plasma processing apparatus and...

Electric heating – Metal heating – By arc

Reexamination Certificate

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C219S121590, C219S121400, C219S121430, C216S026000, C216S067000

Reexamination Certificate

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08058585

ABSTRACT:
A plasma processing method includes the steps of: loading a substrate on a lower electrode, the substrate having a resist mask formed on a transcription film; supplying a processing gas into a processing chamber; forming a magnetic field, which is oriented toward one direction and perpendicular to a line connecting an upper and the lower electrode; supplying a high frequency power to the lower electrode in the processing chamber to thereby form an electric field; converting the processing gas into a plasma by a magnetron discharge caused by a presence of an orthogonal electromagnetic field; and forming lenses on the transcription film by using the plasma. The high frequency power is supplied to the lower electrode while controlling the magnitude of the electric power divided by a surface area of the substrate to be in a range from about 1200 W/31415.9 mm2to 2000 W/31415.9 mm2.

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