Plasma processing method and plasma processing device

Details Plasma processing method and plasma processing device Plasma processing method and plasma processing device

2007-07-17

2007-07-17

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

With measuring or testing

C438S016000, C438S706000, C156S345100

Reexamination Certificate

active

11060316

ABSTRACT:
When plasma ashing is performed on a resist on a wafer, deposit gas containing at least one type of deposit component to be generated from a resist by ashing is added to a gas for plasma generation supplied from a gas supply system for plasma generation, by a deposit gas supply system. By this, the deposit component is actively deposited on the inner surface of a wafer processing chamber so as to protect the inner face of the wafer processing chamber from plasma. As a result, damage of the wafer processing chamber during ashing and particle generation due to the damage are prevented.

REFERENCES:
patent: 6607986 (2003-08-01), Seta et al.
patent: 2003/0192856 (2003-10-01), Balasubramaniam et al.
patent: 02-130824 (1990-05-01), None
patent: 08-186099 (1996-07-01), None
patent: 10-50663 (1998-02-01), None
patent: 2000-12521 (2000-01-01), None
Chaio et al., Photoresist removal method capable of reducing photoresist residue and inhibiting damage to the insulation layer and giving good etch profile, Mar. 11, 2002, 3 pages.

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