Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2007-03-16
2010-02-16
Chen, Kin-Chan (Department: 1792)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C438S714000, C216S059000
Reexamination Certificate
active
07662646
ABSTRACT:
In a plasma processing method, a correlation between substrate type data and optical data is obtained by using a multivariate analysis; substrate type data is obtained from optical data based on the correlation when initiating a plasma processing; and a substrate type is determined by using the obtained substrate type data. Further, a setting data set corresponding to the determined substrate type is selected from setting data sets, each for detecting a plasma processing end point of the plasma processing, each of the setting data sets being stored in advance in a data storage unit; an end point of the plasma processing is detected based on the selected setting data set; and the plasma processing is terminated at the detected end point.
REFERENCES:
patent: 5658418 (1997-08-01), Coronel et al.
patent: 6449038 (2002-09-01), Stolze
patent: 6541388 (2003-04-01), Saito
patent: 2003/0056899 (2003-03-01), Hanazaki
patent: 2005/0020073 (2005-01-01), Perry
patent: 2005/0029228 (2005-02-01), Nozawa et al.
patent: 2005/0143952 (2005-06-01), Tomoyasu et al.
patent: 2007/0229845 (2007-10-01), Usui et al.
patent: 2001-217227 (2001-08-01), None
Nozawa Syuji
Ogasawara Kosuke
Saito Susumu
Chen Kin-Chan
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
LandOfFree
Plasma processing method and plasma processing apparatus for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma processing method and plasma processing apparatus for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing method and plasma processing apparatus for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4157348