Plasma processing method and plasma processing apparatus for...

Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed

Reexamination Certificate

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C438S714000, C216S059000

Reexamination Certificate

active

07662646

ABSTRACT:
In a plasma processing method, a correlation between substrate type data and optical data is obtained by using a multivariate analysis; substrate type data is obtained from optical data based on the correlation when initiating a plasma processing; and a substrate type is determined by using the obtained substrate type data. Further, a setting data set corresponding to the determined substrate type is selected from setting data sets, each for detecting a plasma processing end point of the plasma processing, each of the setting data sets being stored in advance in a data storage unit; an end point of the plasma processing is detected based on the selected setting data set; and the plasma processing is terminated at the detected end point.

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patent: 2005/0143952 (2005-06-01), Tomoyasu et al.
patent: 2007/0229845 (2007-10-01), Usui et al.
patent: 2001-217227 (2001-08-01), None

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