Plasma processing method and plasma processing apparatus

Details Plasma processing method and plasma processing apparatus Plasma processing method and plasma processing apparatus

1995-12-13

1998-12-15

Chapman, Mark

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Process of making radiation-sensitive product

427574, 118723R, G03G 500, H05H 102, A01K 1504, A61D 300

Patent

active

058494553

ABSTRACT:
A plasma processing method and a plasma processing apparatus are provided in which a deposition film is formed, on a substrate serving also as an electrode, by application of high frequency power ranging from 20 MHz to 450 MHz with simultaneous application of DC voltage ranging from 30 to 300 V or -30 to -300 V and/or AC voltage ranging from 30 to 600 V to the substrate in an evacuatable reaction chamber. This method make it practicable to uniformize the plasma and the film thickness distribution independently of the discharge frequency and the applied high frequency power, thereby broadening the allowable range of conditions of the processing such as film formation and the allowable range of the design of the apparatus.

REFERENCES:
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patent: 5534070 (1996-07-01), Okamura et al.
patent: 5540781 (1996-07-01), Yamagami et al.
patent: 5558719 (1996-09-01), Tsuchida et al.
H. Goto, et al. "A Proposed Magnetically Enhanced Reactive Ion Etcher for ULSI", IEEE Transactions on Semiconductor Mfg., vol. 5, pp. 337-349 (1992).
M. Kubota, et al. "Lissajous Electron Plasma Technology for Quarter Micrometer by Dry Etch Process" 10466 Extended Abstracts, May 16-21 (1993) (p. 350) XP000430468.
H. Curtins et al., "Influence of Plasma Excitation Frequency for a-Si:H Film Deposition", Plasma Chemistry and Plasma Processing, 7, 3, 267-73 (1987).

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