Plasma processing method and plasma processing apparatus

Electric heating – Metal heating – By arc

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C219S121360, C219S121420, C219S121540

Reexamination Certificate

active

06888094

ABSTRACT:
A plasma processing method of processing a substrate by controlling the application of a bias to the substrate independently of generation of plasma. The method includes modulating periodically an output value of a high-frequency voltage applied to a substrate base and changing a duty ratio of the periodic modulation for one of each processed substrate and for each of a plurality of processed substrates. The duty ratio is defined as a ratio of a sub-period of a period of the period modulation, during which a large voltage of the output value of the high-frequency voltage is applied, to the period of the periodic modulation.

REFERENCES:
patent: 5350454 (1994-09-01), Ohkawa
patent: 6586887 (2003-07-01), Oogoshi et al.
patent: 6700090 (2004-03-01), Ono et al.
patent: 20040178180 (2004-09-01), Kaji et al.
patent: 63-174320 (1988-07-01), None
patent: 6-151360 (1994-05-01), None
patent: 8-330278 (1996-12-01), None
patent: 8-339989 (1996-12-01), None
patent: 9-129594 (1997-05-01), None
patent: 10-335308 (1998-12-01), None
patent: 11-297679 (1999-10-01), None
patent: 11-340213 (1999-12-01), None
patent: 2000-91325 (2000-03-01), None
patent: 2001-53069 (2001-02-01), None
patent: 2001-32617 (2001-11-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Plasma processing method and plasma processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing method and plasma processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing method and plasma processing apparatus will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3377847

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.