Plasma processing method and plasma generator

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

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216 66, 216 67, 118 501, 118719, 438680, 438726, 438798, H01L 213065, C03C 2506

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056371802

ABSTRACT:
A plasma-processing method used in processes for manufacturing semiconductor devices. During plasma processing, ultraviolet radiation is emitted from a region where a plasma is created. An ultraviolet radiation-blocking means blocks the ultraviolet radiation from impinging on the sample surface to protect it. The blocking means passes particles forming a plasma onto the sample surface. The particles passed through the ultraviolet radiation-blocking plates are implanted into the sample. Alternatively, the processed surface of the sample is etched, or a film is deposited on the processed surface of the sample.

REFERENCES:
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patent: 4526805 (1985-07-01), Yoshizawa
patent: 4776923 (1988-10-01), Spencer et al.
patent: 4836902 (1989-06-01), Kalnitsky et al.
Patent Abstracts of Japan, vol. 018, No. 626 (E-1636), Nov. 29, 1994 & JP-A-06 244159 (Hitachi Ltd), Sep. 2, 1994.
Patent Abstracts of Japan, E Field, vol. 8, No. 626, Nov. 29, 1994 (Nov. 29, 1994, p. 110 E, JP 6-244 159 A (Hitachi Ltd).

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