Plasma processing method and apparatus thereof

Details Plasma processing method and apparatus thereof Plasma processing method and apparatus thereof

2005-03-08

2005-03-08

Phan, Tho (Department: 2821)

Electric lamp and discharge devices: systems

Plural power supplies

Plural cathode and/or anode load device

C315S111210

Reexamination Certificate

active

06864640

ABSTRACT:
A plasma processing method includes introducing a gas into a vacuum chamber through a hole of a dielectric tube attached to a metal body fixed to the vacuum chamber while exhausting from the vacuum chamber to keep the vacuum chamber within a specified pressure. High-frequency power with a frequency ranging from 100 kHz to 3 GHz is applied to a plasma source provided so as to face a substrate mounted on a substrate electrode in the vacuum chamber to generate plasma in the vacuum chamber to perform plasma processing of the substrate.

REFERENCES:
patent: 5576593 (1996-11-01), Schultheiss et al.
patent: 5868848 (1999-02-01), Tsukamoto
patent: 5907221 (1999-05-01), Sato et al.
patent: 5997687 (1999-12-01), Koshimizu
patent: 6177763 (2001-01-01), Morrow
patent: 6225746 (2001-05-01), Wickramanayaka
patent: 6291937 (2001-09-01), Okumura et al.
patent: 6310577 (2001-10-01), Ra
patent: 6346915 (2002-02-01), Okumura et al.
patent: 6387288 (2002-05-01), Bjorkman et al.
patent: 6603269 (2003-08-01), Vo et al.
patent: 20020066535 (2002-06-01), Brown et al.
patent: 09148097 (1997-06-01), None
patent: 09-275093 (1997-10-01), None
patent: 10-098028 (1998-04-01), None
patent: 2000-091244 (2000-03-01), None
patent: 2000-216136 (2000-08-01), None

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