Gas and liquid contact apparatus – Fluid distribution – Valved
Patent
1992-01-08
1999-01-12
Dang, Thi
Gas and liquid contact apparatus
Fluid distribution
Valved
H05H 100, B05D 500
Patent
active
058582584
ABSTRACT:
A method of plasma-processing which includes the step of plasma-processing a matter mounted on a component in a plasma processing vessel by using plasma gases, and the step of introducing an inactive gas into the plasma processing vessel when no plasma process is conducted in the vessel and gases resulted from the previous plasma process remain therein.
REFERENCES:
patent: 4491173 (1985-01-01), Demand
patent: 4534816 (1985-08-01), Chen et al.
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4816638 (1989-03-01), Ukai et al.
patent: 4863561 (1989-09-01), Freeman et al.
patent: 4915777 (1990-04-01), Jucha et al.
patent: 4931136 (1990-06-01), Pausch et al
patent: 4998979 (1991-03-01), Niino
"Journal of Vacuum Science Technology", vol. 15, No. 2, Mar./Apr. 1978, pp. 334-337, Amer. Vacuum Soc., N.Y. USA; P.M. Schaible et al.: Reactive ion etching of aluminum and aluminum alloys in an rf plasma containing halogen species.
Arai Izumi
Kojima Hiroshi
Tahara Yoshifumi
Dang Thi
Tokyo Electron Limited
LandOfFree
Plasma processing method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma processing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1511134