Plasma processing method

Gas and liquid contact apparatus – Fluid distribution – Valved

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H05H 100, B05D 500

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active

058582584

ABSTRACT:
A method of plasma-processing which includes the step of plasma-processing a matter mounted on a component in a plasma processing vessel by using plasma gases, and the step of introducing an inactive gas into the plasma processing vessel when no plasma process is conducted in the vessel and gases resulted from the previous plasma process remain therein.

REFERENCES:
patent: 4491173 (1985-01-01), Demand
patent: 4534816 (1985-08-01), Chen et al.
patent: 4565601 (1986-01-01), Kakehi et al.
patent: 4816638 (1989-03-01), Ukai et al.
patent: 4863561 (1989-09-01), Freeman et al.
patent: 4915777 (1990-04-01), Jucha et al.
patent: 4931136 (1990-06-01), Pausch et al
patent: 4998979 (1991-03-01), Niino
"Journal of Vacuum Science Technology", vol. 15, No. 2, Mar./Apr. 1978, pp. 334-337, Amer. Vacuum Soc., N.Y. USA; P.M. Schaible et al.: Reactive ion etching of aluminum and aluminum alloys in an rf plasma containing halogen species.

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