Plasma processing method

Details Plasma processing method Plasma processing method

2008-09-02

2010-11-30

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S905000

Reexamination Certificate

active

07842619

ABSTRACT:
A plasma processing method includes etching an insulating film of a sample to be processed using plasma generated from etching gas, supplying a large flow of inert gas from above the sample while having the sample mounted on a sample mounting stage, supplying deposit removal gas to only an area near a side wall of a processing chamber, and controlling a plasma density distribution to thereby vary a plasma density at a center area of the processing chamber and a plasma density at an area near the side wall of the processing chamber so as to perform a deposited film removing process for removing the film deposited on the side wall of the processing chamber.

REFERENCES:
patent: 5006192 (1991-04-01), Deguchi
patent: 2008/0266957 (2008-10-01), Moogat et al.
patent: 11-145111 (1999-05-01), None
patent: 2001-110783 (2001-04-01), None
patent: 2007-080850 (2007-03-01), None
patent: 2008-003449 (2008-01-01), None

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