Coating apparatus – Gas or vapor deposition – With treating means
Reexamination Certificate
2011-04-26
2011-04-26
Hassanzadeh, Parvis (Department: 1716)
Coating apparatus
Gas or vapor deposition
With treating means
C156S345410
Reexamination Certificate
active
07930992
ABSTRACT:
Resonance can be surely provided under any plasma condition in such a manner that an antenna (3) is arranged in an opening of an upper part of a chamber (1) to produce an electromagnetic field generated by a microwave, a top plate (4) for sealing the opening of the chamber (1) is provided under the antenna (3), a ring-shaped ridge (41) is provided on a lower surface of the top plate (4) such that a thickness thereof in a diameter direction is tapered so as to be varied sequentially. Thus, only one kind of top plate has the same effect as a top plate having various thicknesses, so that absorption efficiency to the plasma can be considerably improved and the plasma can be generated stably over a range from a high pressure to a low pressure.
REFERENCES:
patent: 5690781 (1997-11-01), Kazuyoshi et al.
patent: 6091045 (2000-07-01), Mabuchi et al.
patent: 6372084 (2002-04-01), Hongo et al.
patent: 7469654 (2008-12-01), Ishibashi et al.
patent: 2004/0094094 (2004-05-01), Takahiro et al.
patent: 8-88190 (1996-04-01), None
patent: 9-232099 (1997-09-01), None
patent: 2000-294548 (2000-10-01), None
patent: 2002-176033 (2002-06-01), None
patent: 2002-237462 (2002-08-01), None
patent: 2002-299240 (2002-10-01), None
patent: 2003-59919 (2003-02-01), None
patent: 2003-347282 (2003-12-01), None
patent: 2004-186303 (2004-07-01), None
patent: WO 03/105544 (2003-12-01), None
JP 2003-059919—Eng dated Feb. 28, 2003.
JP 09-232099—Eng dated Sep. 5, 1997.
International Search Report dated Dec. 28, 2004 (one (1) page).
PCT/IB/338, PCT/IB/373 and PCT/IB/237 (Seven (7) pages), dated Dec. 6, 2006.
Ishibashi Kiyotaka
Nozawa Toshihisa
Crowell & Moring LLP
Dhingra Rakesh
Hassanzadeh Parvis
Tokyo Electron Limited
LandOfFree
Plasma processing equipment does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma processing equipment, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing equipment will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2690765