Plasma processing device and a method of plasma process

Details Plasma processing device and a method of plasma process Plasma processing device and a method of plasma process

1997-06-30

2000-12-19

Mills, Gregory

Coating apparatus

Gas or vapor deposition

With treating means

118723MR, 118723MA, 118725, C23C 16511

Patent

active

06161498&

ABSTRACT:
Disclosed is a plasma process apparatus which permits generating microwaves and a magnetic field so as to bring about electron cyclotron resonance and, thus, to generate a plasma which is applied to a semiconductor wafer, comprising microwave generating means for generating said microwaves, microwave transmitting means for transmitting the microwaves, a process chamber having said semiconductor wafer arranged therein, the microwaves being introduced into said process chamber through said microwave transmitting means, process gas supply means for supplying a process gas into said process chamber, and magnetic field generating means for generating a magnetic field within the process chamber. The frequency of the microwave falls within a range between a lower limit of a cutoff frequency determined by the inner diameter of the process chamber and an upper limit of a maximum frequency at which a standing wave of the microwave does not occur on the surface of the object.

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patent: 5389154 (1995-02-01), Hiroshi et al.
patent: 5714010 (1998-02-01), Matsuyama et al.

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