Plasma processing device

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means

Reexamination Certificate

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Details

C156S345420, C156S345460, C156S345480, C156S345490, C118S7230MW, C118S7230ME, C118S7230MR, C118S7230MA, C118S7230AN

Reexamination Certificate

active

07828927

ABSTRACT:
A plasma processing device comprising a chamber (1) for accommodating therein a substrate (11), a high-frequency power supply (5) for generating microwave, and an antenna unit (3) for radiating microwave into the chamber (1). Microwave generated in the power supply (5) is sent to the antenna unit (3) via a waveguide (6). A top plate (4) forming part of a partition wall of the chamber (1) is formed at the upper portion of the chamber (1). A specified annular delay pass unit (2) formed of the same material as that of the top plate (4), for delaying the propagation of microwave, is provided on the outer peripheral portion of the top plate (4). Accordingly, the plasma processing device can restrict an abnormal discharge and the production of the foreign matters.

REFERENCES:
patent: 5234526 (1993-08-01), Chen et al.
patent: 6091045 (2000-07-01), Mabuchi et al.
patent: 6607633 (2003-08-01), Noguchi
patent: 2001/0036465 (2001-11-01), Ishll et al.
patent: 2002/0076367 (2002-06-01), Hongoh et al.
patent: 1 315 201 (2003-05-01), None
patent: 06-120155 (1994-04-01), None
patent: 2002-50613 (2002-02-01), None
JP—Eng—06-120155, Katsuo (dt. Apr. 28, 1994).

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