Coating apparatus – Gas or vapor deposition – With treating means
Patent
1998-03-26
2000-06-20
Gorgos, Kathryn
Coating apparatus
Gas or vapor deposition
With treating means
118723ER, 118723E, 156345, C23C 1600
Patent
active
06076483&
ABSTRACT:
A plasma processing apparatus has a plurality of annular permanent magnets arranged concentrically with the same polarity in the circumferential direction at the atmosphere side of a second electrode arranged opposite to a stage on which a specimen is placed. Arrangement is provided so that the magnets located adjacent radially have opposite polarity. Furthermore, permanent magnets are arranged at the outer circumference of a vacuum vessel corresponding to a plasma generation chamber portion. A plasma processing apparatus can be provided that allows formation of uniform plasma over a large area and uniform processing of a specimen of a large diameter.
REFERENCES:
patent: 4943361 (1990-07-01), Kakehi et al.
patent: 5108535 (1992-04-01), Ono et al.
patent: 5133825 (1992-07-01), Hakamata et al.
patent: 5279669 (1994-01-01), Lee
patent: 5476182 (1995-12-01), Ishizuka et al.
patent: 5665167 (1997-09-01), Deguchi et al.
patent: 5695597 (1997-12-01), Fujiwara
A. Van Oostrom vol. 17 No. 5, Sep. 1,1970, "Field-Induced surface Rearrangement in a Field-Ion Microscope" pp. 206-208.
Shinichi Tachi et al., Feb. 1988, "Low-Temperature Reactive Ion Etching and Microwave Plasma Etching of silicon" pp. 616-618.
A. M. Barklund et al. Received Sep. 17, 1990 accepted Dec. 14, 1990 "Plasma Jet Dry Etching Using Different Electrode Configurations".
Nishikawa Kazuyasu
Ootera Hiroki
Shintani Kenji
Taki Masakazu
Gorgos Kathryn
Mitsubishi Denki & Kabushiki Kaisha
Nicolas Wesley A.
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