Coating apparatus – Gas or vapor deposition – With treating means
Patent
1993-02-26
1994-09-27
Breneman, R. Bruce
Coating apparatus
Gas or vapor deposition
With treating means
118723E, 118723MP, 156345, C23C 1600, H01L 2100
Patent
active
053504542
ABSTRACT:
A neutral or plasma sound wave is launched into a plasma used within a plasma processing chamber in order to selectively control the location and concentration of plasma constituents, including (1) contaminants; (2) reactants, including ions or molecules; and/or (3) reaction products. The plasma sound wave comprises a periodic waveform controlled to include at least a second harmonic component. Oseen or Oseen-like forces associated with a neutral or plasma sound wave impart a drift velocity to contaminant particles, e.g., micron-sized dust particles, that moves such particles in a desired direction, e.g., away from a wafer or other work surface being processed by the plasma. An analogous Oseen or Oseen-like force associated with a plasma sound wave imparts a drift velocity to the reactants or reaction products in the plasma so as to move such atomic-sized reactants or products in a desired direction, e.g., proximate the workpiece in the case of the reactants, or removed from the workpiece in the case of the products. The drift velocity, including its direction, is controlled by controlling the harmonic content, intensity and/or phase of the neutral or plasma sound wave.
REFERENCES:
patent: 4848656 (1989-07-01), Magill
patent: 4948497 (1990-08-01), Ohkawa
Ohkawa et al., "Neutral Gas and Impurity Ion Flow Produced by a Plasma Sound Wave", Comments Plasma Phys. Controlled Fusion, vol. 15, No. 5, pp. 261-265 (1993).
Dyer et al., "Dusty Plasma Experiments", Extended Abstract for the 4th Workshop on Dusty Plasmas pp. 41-42 (Sep. 1990).
Hueter, et al., "Techniques for the Use of Sound and Ultrasonic in Engineering and Science", Sonics, pp. 220-225, John Wiley & Sons (New York) (1955).
Dyer, et al., "Acoustic Levitation by Oseen Drag", J. Acout. Soc. Am, vol. 92 (4), pp. 2207-2211 (Oct. 1992).
Plasma Processing of Materials: Scientific Opportunities and Technological Challenges, Chapters 2 & 3, pp. 6-36, National Academy Press, Washington D.C. (1991).
Donovan, Particle Control for Semiconductor Manufacturing, Chapter 2, pp. 9-24, Marcel Dekker, Inc. (New York & Basel) (1990).
Baskin Jonathan D.
Breneman R. Bruce
General Atomics
LandOfFree
Plasma processing apparatus for controlling plasma constituents does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma processing apparatus for controlling plasma constituents , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus for controlling plasma constituents will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1263630