Plasma processing apparatus etching tunnel-type

Details Plasma processing apparatus etching tunnel-type Plasma processing apparatus etching tunnel-type

1993-06-17

1995-01-24

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 118723ER, 118725, H01L 2100

Patent

active

053839846

ABSTRACT:
A substrate processing apparatus comprising a process tube for enclosing a plurality of semiconductor wafers, injectors for introducing process gas into the process tube, a vacuum pump for exhausting the process tube, RF electrodes arranged along the outer circumference of the process tube and serving to generate high frequency electric field, when power is supplied, in a process-gas-introduced region so as to make process gas into plasmas, a high frequency power source for supplying power to the RF electrodes, heaters arranged in the process tube to directly heat the plural wafers, a power supply for supplying power to the heaters, and a controller for controlling the amount of power supplied from the power supply to the heaters.

REFERENCES:
patent: 4786352 (1988-11-01), Benzing
patent: 5015330 (1991-05-01), Okumura et al.
patent: 5099100 (1992-03-01), Bersin et al.
patent: 5217560 (1993-06-01), Kurono et al.

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