Plasma processing apparatus comprising electron supply chamber a

Details Plasma processing apparatus comprising electron supply chamber a Plasma processing apparatus comprising electron supply chamber a

1993-12-09

1994-11-29

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118719, 118723FE, 118723E, H01L 2100, C23C 1650

Patent

active

053686764

ABSTRACT:
A plasma etching apparatus provided with a processing chamber adjustable to be highly decompressed. A pair of parallel electrodes are arranged in the processing chamber and semiconductor wafers are placed on the electrodes. High frequency voltage is applied between the paired parallel electrodes to generate electric field of high frequency, perpendicular to the process face of the wafer, in the processing chamber. Etching gas is introduced into the processing chamber and made plasma in it. An electron supply chamber provided with an electron generating filament therein is connected to the processing chamber. Electrons generated in the electron supply chamber are induced into the processing chamber by induction magnetic field and help the etching gas be made plasma.

REFERENCES:
patent: 4175029 (1979-11-01), Kovalsky et al.
patent: 4269137 (1981-05-01), Johnson
patent: 4749587 (1988-07-01), Bergmann et al.
patent: 4871918 (1989-10-01), Miljevic
patent: 4877505 (1989-10-01), Bergmann
patent: 4878995 (1989-11-01), Arikado et al.
patent: 5147497 (1992-09-01), Nozawa et al.
Patent Abstracts of Japan, vol. 9, No. 123, (E-317) [1846], May 28, 1985, & JP-A-60-10731, Jan. 19, 1985, A. Sudou, "Plasma Etching Device".

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