Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1992-07-24
1994-05-24
Nguyen, Nam
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
20419233, 156345, C23C 1434, C23F 102
Patent
active
053146034
ABSTRACT:
A plasma processing apparatus has a process chamber and a pair of electrodes provided in the process chamber to oppose each other. An RF power supply outputs an RF power to be supplied to at least one of the pair of electrodes in the process chamber. A power detector detects an actual RF power to be applied to one of the electrodes in the process chamber. A controller controls the RF power output from the RF power supply to a predetermined value in accordance with the actual RF power detected by the power detector.
REFERENCES:
patent: 4500408 (1985-02-01), Boys et al.
patent: 4626312 (1986-12-01), Tracy
patent: 4871421 (1989-10-01), Ogle et al.
patent: 5116482 (1992-05-01), Setoyama et al.
Naito Yukio
Nishimura Eiichi
Oshima Kouichi
Shimizu Masafumi
Sugiyama Kazuhiko
Nguyen Nam
Tokyo Electron Yamanashi Limited
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