Coating apparatus – Gas or vapor deposition – With treating means
Patent
1998-09-22
2000-12-05
Beck, Shrive
Coating apparatus
Gas or vapor deposition
With treating means
118729, C23C 1600
Patent
active
061552011
ABSTRACT:
For permitting increase in productivity and improvement in uniformity and reproducibility of characteristics of deposited films while maintaining good film characteristics, a plasma processing apparatus is constructed in such structure that a plurality of cylindrical substrates are set in a depressurizable reaction vessel and that a source gas supplied into the reaction vessel is decomposed by a high frequency power introduced from a high frequency power introducing means to generate a plasma to permit deposited film formation, etching, or surface modification on the cylindrical substrates, wherein the plurality of cylindrical substrates are placed at equal intervals on the same circumference and wherein the high frequency power introducing means is provided outside the placing circumference for the cylindrical substrates.
REFERENCES:
patent: 4676195 (1987-06-01), Yasui et al.
patent: 5582648 (1996-12-01), Katagiri et al.
Akiyama Kazuyoshi
Hosoi Kazuto
Murayama Hitoshi
Ohtsuka Takashi
Okamura Ryuji
Beck Shrive
Canon Kabushiki Kaisha
Hassanzodel P.
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