Plasma processing apparatus and plasma processing method

Details Plasma processing apparatus and plasma processing method Plasma processing apparatus and plasma processing method

2007-01-17

2010-02-02

Hassanzadeh, Parviz (Department: 1792)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

C156S345360, C156S345480, C118S7230MW, C118S715000, C118S7230ER, C118S7230IR

Reexamination Certificate

active

07655111

ABSTRACT:
At a frame26in a microwave plasma processing apparatus100, numerous horizontal spray gas nozzles27formed therein injection holes A and numerous vertical gas nozzles28formed therein injection holes B are fixed. A first gas supply means50injects argon gas through the injection holes A into an area near each dielectric parts31a. A second gas supply means55injects silane gas and hydrogen gas through the injection holes B into a position at which the gases do not become over-dissociated. The gases injected as described above are raised to plasma with a microwave transmitted through each dielectric parts31a. Since the vertical gas nozzles28are mounted at positions at which they do not block the flow of plasma traveling toward a substrate G, ions and electrons do not collide with the vertical gas nozzles28readily.

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JP 2001-135267—Eng—May 18, 2001.

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