Plasma processing apparatus and plasma processing method

Details Plasma processing apparatus and plasma processing method Plasma processing apparatus and plasma processing method

2006-06-06

2006-06-06

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S710000, C156S345510

Reexamination Certificate

active

07056831

ABSTRACT:
In a plasma processing apparatus for plasma-processing a silicon wafer6to which a protective film6ais stuck in a state that the silicon wafer6is held by a first electrode3by electrostatic absorption and is being cooled, the top surface3gof the first electrode3consists of a top surface central area A that is inside a boundary line P2that is distant inward by a prescribed length from the outer periphery P1of the silicon wafer6and in which the conductor is exposed, and a ring-shaped top surface peripheral area B that surrounds the top surface central area A and in which the conductor is covered with an insulating coating3f.This structure makes it possible to hold the silicon wafer6by sufficient electrostatic holding force by bringing the silicon wafer6into direct contact with the conductor and to increase the cooling efficiency by virtue of heat conduction from the silicon wafer6to the first electrode3.

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