Plasma processing apparatus and method of processing substrates

Details Plasma processing apparatus and method of processing substrates Plasma processing apparatus and method of processing substrates

1993-03-10

1996-03-05

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118713ME, 118723MR, 118723MA, 118724, 156345, 20429838, C23C 1600

Patent

active

054964105

ABSTRACT:
In a plasma processing apparatus which forms a gaseous raw material into a plasma by using electron cyclotron resonance and processes a substrate, leading-edge opening portions of an introduction tube into which a gaseous raw material is introduced are formed in the inner wall surface of the container in such a way that they do not project within the vacuum container. A heater is wound around the introduction pipe so that the opening portions thereof can be heated. With this construction, even if a gaseous raw material which is a liquid or solid at normal temperature and normal pressure is made to flow, the gaseous raw material can be prevented from being liquefied or solidified in the opening portions of the introduction pipe, and the opening portions of the introduction pipe can be prevented from being clogged. In addition, since there are no projections within the vacuum container, the propagation of microwaves is not impeded, making it possible to uniformity process the substrate.

REFERENCES:
patent: 4423956 (1984-01-01), Gordon
patent: 4699805 (1987-10-01), Seelbach et al.
patent: 4844006 (1989-07-01), Page, Jr. et al.
patent: 5120680 (1992-06-01), Foo et al.
patent: 5160397 (1992-11-01), Doki et al.
patent: 5211825 (1993-05-01), Saito et al.

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