Plasma processing apparatus and method

Details Plasma processing apparatus and method Plasma processing apparatus and method

1998-10-02

2000-08-08

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

438715, H01L 2100

Patent

active

RE0368105

ABSTRACT:
A plasma processing apparatus comprises a first passage opened in a top of suscepter at a peripheral area thereof, a first gas supply source for supplying heat exchange gas into a small clearance between the suscepter and a wafer through the first passage, a first vacuum pump for exhausting the clearance through the first passage, a second passage opened in the top of the suscepter at a center area thereof, a second gas supply source for supplying heat exchange gas into the clearance through the second passage, a second vacuum pump for exhausting the clearance through the second passage, and a controller for controlling the first and second gas supply sources and the first and second vacuum pumps independently of the others in such a way that backpressure caused in the second passage by the second gas supply source and vacuum pump can become lower than backpressure caused in the first passage by the first gas supply source and vacuum pump.

REFERENCES:
patent: 5002631 (1991-03-01), Giapis et al.
patent: 5110407 (1992-05-01), Ono et al.
patent: 5460684 (1995-10-01), Saeki et al.

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