Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1993-06-24

1995-02-14

Nguyen, Nam

Coating apparatus

Gas or vapor deposition

With treating means

118723ME, 118723MW, 156345, 20429838, C23C 1650

Patent

active

053891546

ABSTRACT:
In a plasma processing apparatus, a second microwave guiding unit has at least one vacuum waveguide with a dielectric window and an opening being formed on the side of the microwave introducing hole. The vacuum waveguide is arranged at a position where an external magnetic field applied from an external magnetic field applying unit is stronger than an ECR condition, and causes the microwave guided from a first microwave guiding unit to propagate through the dielectric window in a direction perpendicular to the external magnetic field such that the electric field of the microwave is parallel to the external magnetic field applied to the second microwave guiding unit by the external magnetic field applying unit. The dielectric window is arranged at a position at which at least a portion of the dielectric window cannot been seen directly from the microwave introducing hole. The propagating direction of the microwave is changed at a position immediately above the plasma chamber, at which the external magnetic field strength is higher than the ECR condition, thereby introducing, through the opening, the microwave to the microwave introducing hole along the external magnetic field, whereby converting a raw material in the plasma chamber into plasma by electron cyclotron resonance (ECR).

REFERENCES:
patent: 4940015 (1990-07-01), Kobashi et al.
patent: 5125358 (1992-06-01), Ueda et al.
patent: 5146138 (1992-09-01), Ootera et al.
patent: 5234565 (1993-08-01), Yoshida
Toshiro Ono et al., "Electron Cyclotron Resonance Plasma Deposition Technique Using Raw Material Supply by Sputtering", Japanese Journal of Applied Physics, vol. 23, 8 Aug. 1984, pp. L534-L536.
Takashi Akahori et al., "Preparation of TiN Films by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 30, 12B, Dec. 1991, pp. 3558-3561.
Morito Matsuoka et al., "A Few Techniques for Preparing Conductive Material Films for Sputtering-Type Electron Cyclotron Resonance Microwave Plasma", Japanese Journal of Applied Physics, vol. 28, 3 Mar. 1989, pp. L503-L506.

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