Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1997-07-21

2000-07-18

Breneman, Bruce

Coating apparatus

Gas or vapor deposition

With treating means

156345, C23C 1600

Patent

active

060891815

ABSTRACT:
In a plasma etching apparatus, a process gas is supplied into a process chamber and converted into plasma by means of RF discharge, and a semiconductor wafer placed on a lower electrode is etched by the plasma. An RF power supply mechanism is connected to the lower electrode for applying thereto a superposed RF power for forming an RF electric field in the process chamber. The RF power supply mechanism has first and second RF power supplies for respectively oscillating a low frequency RF component and a high frequency RF component having a higher frequency than the low frequency RF component. The high frequency RF component from the second frequency RF component supply has its wave form modulated by a modulator on the basis of the wave form of the low frequency RF component from the first frequency RF power supply. Thereafter, the modulated high frequency RF component and the low frequency RF component are superposed upon each other. The high frequency RF component has a larger amplitude at a negative side peak of the low frequency RF component than at a positive side peak of the low frequency RF component.

REFERENCES:
patent: 4539068 (1985-09-01), Takagi et al.
patent: 4579618 (1986-04-01), Celestino et al.
patent: 4617079 (1986-10-01), Tracy et al.
patent: 5405448 (1995-04-01), Jost et al.
patent: 5573597 (1996-11-01), Lantsman
patent: 5849372 (1998-12-01), Annaratone et al.
patent: 5888414 (1999-03-01), Collins et al.

Affiliated with

Also associated with

Rating

Plasma processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2025623