Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1994-10-27

1995-11-28

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

216 67, B44C 122

Patent

active

054704260

ABSTRACT:
A plasma processing apparatus includes a high-frequency electric field generating mechanism, having a pair of opposing electrodes arranged in a reaction vessel, for generating a high-frequency electric field between the electrodes, and a magnetic field generating mechanism constituted by a magnetic field generating coil arranged outside the reaction vessel to generate a magnetic field which does not spatially overlap the high-frequency electric field generated by the high-frequency electric field generating mechanism. When a reaction gas is supplied into the reaction vessel, and a high-frequency power is supplied to the magnetic field generating coil, a plasma is produced by a magnetic field formed in the form of a solenoid. Since the magnetic field does not spatially overlap the high-frequency electric field generated by the high-frequency electric field generating mechanism, a plasma density and ion energy can be independently controlled during dry etching for a wafer, and the influence of a magnetic field on the wafer can be prevented.

REFERENCES:
patent: 4826585 (1989-05-01), Davis
patent: 5304279 (1994-04-01), Coultas et al.

Affiliated with

Also associated with

Rating

Plasma processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2010727