Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1996-08-13

1998-07-14

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723E, 156345, C23C 1600

Patent

active

057798036

ABSTRACT:
An apparatus for subjecting a semiconductor wafer having an uncovered marginal portion, from which a photoresist film is removed, to an anisotropic etching. The apparatus comprises a process chamber which can be set to a vacuum. Upper and lower electrodes opposite to each other are provided in the process chamber. An etching gas is made into plasma between these electrodes. An electrostatic chuck is arranged on the lower electrode. A wafer is mounted on the electrostatic chuck. A ring made of dielectric material, movable upward and downward, is arranged between the electrodes. A central portion of the ring is formed as a hood having a recessed shape corresponding to the marginal portion of the wafer. During the etching, the hood covers the marginal portion of the wafer under a plasma sheath, so as to be out of contact with the wafer, thereby preventing the marginal portion of the wafer from being etched.

REFERENCES:
patent: 5350479 (1994-09-01), Collins et al.
patent: 5356515 (1994-10-01), Tahara et al.
patent: 5459632 (1995-10-01), Birang et al.
patent: 5560804 (1996-10-01), Higuchi et al.

Affiliated with

Also associated with

Rating

Plasma processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1877885