Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1991-11-04

1995-05-09

Nguyen, Nam

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

20429831, C23F 102

Patent

active

054136733

ABSTRACT:
In a plasma etching apparatus, a workpiece is mounted on a lower electrode positioned opposite to an upper electrode , a ring-shaped spacer made of a dielectric material is provided on the outer peripheral portion of the lower electrode. When the RF power is supplied between the upper and lower electrodes, the plasma is generated only in a region defined by the upper and lower electrodes surrounded by the dielectric spacer.

REFERENCES:
patent: 4131533 (1978-12-01), Bialks et al.
patent: 4253907 (1981-03-01), Parry et al.
patent: 4367114 (1983-01-01), Steinberg et al.
patent: 4380488 (1983-04-01), Reichelderfer et al.
patent: 4482419 (1984-11-01), Tsukada et al.
patent: 4496423 (1985-01-01), Walton
patent: 4614639 (1986-09-01), Hegedus

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