Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1998-10-15

2000-11-21

Mills, Gregory

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723I, H05H 100, C23C 1600

Patent

active

061497606

ABSTRACT:
An inductively coupled type dry etching apparatus has a spiral RF antenna disposed on the ceiling wall of a process chamber. A susceptor is arranged in the process chamber, for mounting a semiconductor wafer thereon. The ceiling wall has upper and lower layers with a dielectric matrix, and a conductive Faraday shield layer sandwiched therebetween. The Faraday shield layer has a plurality of slits radially arranged. The matrix of the upper and lower layers and the Faraday shield layer are set to have coefficients of thermal expansion close to each other, and/or the Faraday shield layer is set to have a very small thickness.

REFERENCES:
patent: 4497875 (1985-02-01), Arakawa et al.
patent: 5433812 (1995-07-01), Cuomo et al.

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